Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors-Reference-Cited by-同舟云学术

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Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

Published:2005-02 Issue:7 Volume:133 Page:455-458
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Veinger A.I.,Zabrodskii A.G.,Tisnek T.V.,Goloshchapov S.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference3 articles.

1. Electron—Electron Interactions in Disordered Systems;Altshuler,1985

2. Microwave magnetoresistance of compensated p-Ge:Ga in the region of the insulator-metal phase transition

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2. Effect of Fe/Fe3O4 Nanoparticles Stray Field on the Microwave Magnetoresistance of a CoFeB/Ta/CoFeB Synthetic Ferrimagnet;ACS Sensors;2021-11-29

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4. Processing-dependence and the nature of the blue-shift of Bi3+-related photoemission in ScVO4at elevated temperatures;J. Mater. Chem. C;2014-10-02

5. Angular and Temperature-related Specific Features of the Interaction between Light and Heavy Holes in Weakly Doped p-Ge:Ga at Low Temperatures;Journal of Physics: Conference Series;2012-07-30

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