In-situ doping and implantation of GaN layers with Mn
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultra-high pressure annealing of Mn-implanted HVPE-GaN;Journal of Alloys and Compounds;2023-12
2. Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions;Surface and Coatings Technology;2018-12
3. Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions;Surface and Interface Analysis;2018-03-02
4. Mn doped GaN nanoparticles synthesized by rapid thermal treatment in ammonia;Materials Chemistry and Physics;2015-08
5. A study of the structural properties of GaN implanted by various rare-earth ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
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