High quality AlGaN growth by changing growth pressure and insertion of AlN/GaN superlattice interlayer-Reference-Cited by-同舟云学术

High quality AlGaN growth by changing growth pressure and insertion of AlN/GaN superlattice interlayer

Published:2004-09 Issue:10 Volume:1 Page:2445-2449
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kim J. Y.¹,Lee K. J.¹,Shin E. H.¹,Lim K. Y.¹,Lee S. H.²,Nahm K. S.²

Affiliation:

1. Department of Semiconductor Science & Technology and SPRC, Chonbuk National University, Duckjin‐Dong, Duckjin‐ku, Chonju 561‐756, Korea

2. Department of Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Duckjin‐Dong, Duckjin‐ku, Chonju 561‐756, Korea

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200404981

Reference10 articles.

1. Growth and applications of Group III-nitrides

2. S.NakamuraandG.Fasol The Blue Laser Diode (Springer Berlin 1997) p. 277.

3. Blue InGaN-based laser diodes with an emission wavelength of 450 nm

4. Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer

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1. Microscope investigation and electrical conductivity of Si-doped n-type Al0.45Ga0.55N layer grown on AlGaN/AlN superlattices;Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII;2014-02-27

2. Growth and characterization of a high-quality Al0.45Ga0.55N layer with AlGaN/AlN superlattices;Journal of the Korean Physical Society;2013-10

3. Strain-Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer;Strain;2010-06-10