Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
2. In-polar InN grown by plasma-assisted molecular beam epitaxy
3. Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
4. Surface charge accumulation of InN films grown by molecular-beam epitaxy
5. Evidence forp-Type Doping of InN
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