Growth and characterization of reactive sputtered AlInN films
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840‐8502, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303378
Reference20 articles.
1. Growth and some properties of Al x In 1-x N crystalline thin films
2. Growth of Al In1−N single crystal films by microwave-excited metalorganic vapor phase epitaxy
3. Crystal Structure and Orientation of AlxIn$_{{\bf 1}-\ninmb{x}}$N Epitaxial Layers Grown on (0001) \mbα-Al$_{\bf 2}$O$_{\bf 3}$ Substrates
4. Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
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