Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference44 articles.
1. R. Butté, G. Cosendey, L. Lugani, M. Glauser, A. Castiglia, G. Perillat-Merceroz, J.-F. Carlin, N. Grandjean, in: B. Gil (Ed.), III-Nitride Semiconductors and their Modern Devices, Oxford Science Publications, 2013, Series on Semiconductor Science and Technology, vol. 18, p.177.
2. InAlN/GaN HEMTs: a first insight into technological optimization
3. Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
4. Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors
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