Electron scattering in GaAs/n‐AlGaAs selectively doped heterojunctions with charged and neutral InGaAs quantum dots
Author:
Affiliation:
1. University of Tokyo, IIS, 4–6–1 Komaba, Meguru‐ku, Tokyo, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303082
Reference13 articles.
1. GaAs/n-AlGaAs field-effect transistor with embedded InAs quantum traps and its programmable threshold characteristics
2. Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
3. Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
4. Transport properties of two‐dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots
5. InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas
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1. Roles of Quantum Nanostructures on the Evolution and Future Advances of Electronic and Photonic Devices;2007 IEEE International Electron Devices Meeting;2007
2. Quantum dot electrons as controllable scattering centers in the vicinity of a two-dimensional electron gas;Phase Transitions;2006-09
3. Temperature dependence of the inelastic scattering in a GaAs/n-AlGaAs selectively doped heterojunction with InGaAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2005-11
4. Inelastic scattering processes in GaAs/n-AlGaAs selectively doped heterojunctions with InGaAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2004-03
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