GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates

Author:

Zhang Yun,Yoo Dongwon,Limb Jae-Boum,Ryou Jae-Hyun,Dupuis Russell D.,Shen Shyh-Chiang

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications;Frontiers in Materials;2022-03-11

2. AlGaN avalanche Schottky diodes with high Al-content;Japanese Journal of Applied Physics;2019-05-14

3. Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance;IEEE Photonics Technology Letters;2015-03-01

4. Back-Illuminated GaN/AlGaN Solar-Blind Avalanche Photodiodes;IEEE Photonics Technology Letters;2015-02-01

5. Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates;Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon;2010-08-19

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