Report on the evening rump session on InN – July 21, 2004 at the 2004 International Workshop on Nitride Semiconductors-Reference-Cited by-同舟云学术

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Report on the evening rump session on InN – July 21, 2004 at the 2004 International Workshop on Nitride Semiconductors

Published:2005-04-11 Issue:7 Volume:2 Page:2240-2245
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Trager‐Cowan C.¹

Affiliation:

1. Department of Physics, University of Strathclyde, John Anderson Building, 107 Rottenrow, Glasgow G4 0NG, Scotland, UK

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461614

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films;Journal of Materials Science: Materials in Electronics;2015-01-25

2. Simple models for InGaN alloys;physica status solidi (a);2011-11-24

3. Linear optical response of zinc-blende and wurtzite III-N (III=B, Al, Ga, and In);Journal of Crystal Growth;2007-07

4. Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxy;Journal of Crystal Growth;2007-04

5. Molecular beam epitaxy of phase pure cubic InN;Applied Physics Letters;2006-12-25

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