Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxy

Published:2007-04 Issue: Volume:301-302 Page:504-507
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yodo Tokuo,Shimada Teruya,Tagawa Sumito,Harada Yoshiyuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Physical properties of InN with the band gap energy of 1.1eV

2. Optical bandgap energy of wurtzite InN

3. Unusual properties of the fundamental band gap of InN

4. Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001) Substrates by Molecular Beam Epitaxy Assisted by Electron Cyclotron Resonance

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates;Thin Solid Films;2019-02

2. Theoretical Study of Adsorption of Group IIIA Nitrides on Si(111);The Journal of Physical Chemistry C;2009-03-16

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