Transport Transient of Electrons in Wurtzite InN: The Effect of the Band Structure Anisotropy-Reference-Cited by-同舟云学术

Transport Transient of Electrons in Wurtzite InN: The Effect of the Band Structure Anisotropy

Published:2002-12-19 Issue:1 Volume: Page:368-372
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

de Vasconcelos T.F.¹,Maia F.F.¹,Caetano E.W.S.¹,Freire V.N.¹,Farias G.A.¹,da Costa J.A.P.²,da Silva E.F.³

Affiliation:

1. Departamento de Física, Universidade Federal do Ceará, Centro de Ciências, Caixa Postal 6030, Campus do Pici, 60455‐900 Fortaleza, Ceará, Brazil

2. Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Caixa Postal 1641, 59072‐970 Natal, Rio Grande do Norte, Brazil

3. Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, 50670‐901 Recife, Pernambuco, Brazil

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390065

Reference13 articles.

1. S.J.Pearson in: GaN and Related Materials Series Optoelectronic Properties of Semiconductors and Superlattices Gordon and Breach New York 1997.

2. S.NakamuraandG.Fasol The Blue Laser Diode Springer Berlin 1997.

3. Progress and prospects of group-III nitride semiconductors

4. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

5. Transient electron transport in wurtzite GaN, InN, and AlN

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