LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications-Reference-Cited by-同舟云学术

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LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Published:2010-03-10 Issue:5 Volume:7 Page:1317-1324
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

di Forte Poisson M.-A.,Sarazin N.,Magis M.,Tordjman M.,Di Persio J.,Langer R.,Iliopoulos E.,Georgakilas A.,Kominou P.,Guziewicz M.,Kaminska E.,Piotrowska A.,Gaquière C.,Oualli M.,Chartier E.,Morvan E.,Delage S.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03

2. Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures;Semiconductor Science and Technology;2015-09-21

3. High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure;Applied Physics Express;2015-09-16

4. Effects of Surface Passivation and Deposition Methods on the 1/ $f$ Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors;IEEE Electron Device Letters;2015-04

5. Evaluation of Thermal Versus Plasma-Assisted ALD Al₂O₃ as Passivation for InAlN/AlN/GaN HEMTs;IEEE Electron Device Letters;2015-03

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