Effects of Surface Passivation and Deposition Methods on the 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors-Reference-Cited by-同舟云学术

Effects of Surface Passivation and Deposition Methods on the 1/ $f$ Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Published:2015-04 Issue:4 Volume:36 Page:315-317
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Do Thanh Ngoc Thi,Malmros Anna,Gamarra Piero,Lacam Cedric,Di Forte-Poisson Marie-Antoinette,Tordjman Maurice,Horberg Mikael,Aubry Raphael,Rorsman Niklas,Kuylenstierna Dan

Funder

GigaHertz Center in a joint project financed by the Swedish Governmental Agency of Innovation Systems (VINNOVA), Chalmers University of Technology, RUAG AB, and Ericsson AB

MANGA project financed by the Swedish Defence Material Administration

Swedish Foundation for Strategic Research (SSF)

Swedish Research Council (VR)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7064687/07035032.pdf?arnumber=7035032

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