Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
2. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
3. InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
4. Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage
5. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
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2. Continuum level-set model for anisotropic wet etching of patterned sapphire substrates;Semiconductor Science and Technology;2021-03-10
3. Characteristic enhancement of InGaN-based light emitting diodes grown on pattern sapphire substrates;IOP Conference Series: Materials Science and Engineering;2020-02-01
4. Characteristic Enhancement of InGaN-Based Light Emitting Diodes Grown on Pattern Sapphire Substrates;Materials Science Forum;2020-01
5. Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser;Applied Sciences;2018-10-08
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