Author:
Lossy Richard,Liero Armin,Krüger Olaf,Würfl Joachim,Tränkle Günther
Reference5 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates
3. , , , , , and , AlGaN/GaN HEMTs on Silicon Carbide Substrates for Microwave Power Operation,Digest of GaAsMANTECH 2003 p. 327, published by GaAsMANTECH Inc., St. Louis.
4. Via drilling, in: LIA Handbook of Laser Materials Processing, J.F. Ready and D.F. Farson (Eds.) (Laser Institute of America, Magnolia Publishing, 2001), pp. 661–665.
5. Physical chemistry of the femtosecond and nanosecond laser–material interaction with SiC and a SiC–TiC–TiB2 composite ceramic compound
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