Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser-Reference-Cited by-同舟云学术

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Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser

Published:2011-01 Issue:6 Volume:257 Page:2303-2307
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu L.,Chang C.Y.,Wu Wenhsing,Pearton S.J.,Ren F.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. SiC MEMS: opportunities and challenges for applications in harsh environments

2. Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices

3. High-Temperature Single-Crystal 3C-SiC Capacitive Pressure Sensor

4. Laser-assisted processing of VIAs for AlGaN/GaN HEMTs on SiC substrates

5. Gallium nitride powerbar transistors with via holes fabricated by laser ablation

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1. Investigation of interactions between fiber lasers and Si3N4 sheets for drilling square microholes with multi-ring strategy;The International Journal of Advanced Manufacturing Technology;2024-03-21

2. Laser drilling in silicon carbide and silicon carbide matrix composites;Optics & Laser Technology;2024-03

3. Experimental investigation on laser micromilling of SiC microchannels;The International Journal of Advanced Manufacturing Technology;2018-10-30

4. Excimer laser ablation of aluminum: influence of spot size on ablation rate;Laser Physics;2016-09-30

5. Fabrication and electrical properties of an AlGaN/GaN HEMT on SiC with a taper-shaped backside via hole;Journal of the Korean Physical Society;2015-08

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