Thermal effects of substrates on the performance of AlGaN/GaN HFETs-Reference-Cited by-同舟云学术

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Thermal effects of substrates on the performance of AlGaN/GaN HFETs

Published:2003-11-24 Issue:7 Volume: Page:2364-2367
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Park Jeong¹,Lee Chin C.¹,Kim J. W.²,Lee J. S.²,Hwang W. J.³,Shin M. W.³

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, Irvine, CA 92697‐2625, USA

2. DAD Group, LG Electronics Institute Technology, Woomyon, Seoul, Korea

3. Semiconductor Materials/Devices Laboratory, Department of Ceramic Engineering Myong Ji University, 38‐2 Yongin, Kyunggi, Korea 449‐728

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303465

Reference9 articles.

1. High power applications for GaN-based devices

2. An insulator-lined silicon substrate-via technology with high aspect ratio

3. Lester F.EastmanandUmesh K.Mishra IEEE Spectrum No. 28–33 (2002).

4. Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

5. Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-plane anisotropic strain of elastically and plastically deformed III-nitrides on lithium gallate;Thin Solid Films;2009-10

2. A thermal model for static current characteristics of AlGaN∕GaN high electron mobility transistors including self-heating effect;Journal of Applied Physics;2006-02-15

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