Recent development of InN RF‐MBE growth and its structural and property characterization-Reference-Cited by-同舟云学术

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Recent development of InN RF‐MBE growth and its structural and property characterization

Published:2004-04 Issue:6 Volume:1 Page:1487-1495
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Nanishi Yasushi¹,Saito Yoshiki¹,Yamaguchi Tomohiro¹,Araki Tsutomu¹,Miyajima Takao²,Naoi Hiroyuki³

Affiliation:

1. Dept. of Photonics, Ritsumeikan Univ., 1‐1‐1 Noji‐Higashi, Kusatsu, Shiga 525‐8577, Japan

2. Core Technology Development Center, Core Technology & Network Company, Sony Corporation,4‐14‐1 Asahi‐cho, Atsugi, Kanagawa 243‐0014, Japan

3. Center for Promotion of the COE Program, Ritsumeikan Univ., 1‐1‐1 Noji‐Higashi, Kusatsu,Shiga 525‐8577, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304090

Reference25 articles.

1. Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy

2. High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy

3. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

4. Growth of Thick InN by Molecular Beam Epitaxy

5. Fundamental absorption edge in GaN, InN and their alloys

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1. Optical studies of nitrogen plasma for molecular beam epitaxy of InN;Journal of Applied Physics;2020-12-07

2. AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature;Scientific Reports;2019-04-18

3. Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction;Journal of Luminescence;2016-05

4. Solid-State Lighting: Toward Smart and Ultraefficient Materials, Devices, Lamps, and Systems;Photonics;2015-02-27

5. Toward Smart and Ultra-efficient Solid-State Lighting;Advanced Optical Materials;2014-06-27

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