MOVPE growth optimisation of CdTe epitaxial layers for p-i -n diode X-ray detector fabrication
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference4 articles.
1. Influence of detector surface processing on detector performance
2. Development of high-resolution CdTe radiation detectors in a new M-/spl pi/-n design
3. Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications;Sensors;2009-05-12
2. Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals;Applied Physics A;2008-01-25
3. Development of a homoepitaxial technology for fabrication of X- and γ-ray detectors based on CdTe p-i-n diodes;Nuclear Physics B - Proceedings Supplements;2007-04
4. A focal plane detector design for a wide band Laue-lens telescope;SPIE Proceedings;2006-06-14
5. CdTe: mobility;New Data and Updates for II-VI Compounds
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