Development of a homoepitaxial technology for fabrication of X- and γ-ray detectors based on CdTe p-i-n diodes-Reference-Cited by-同舟云学术

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Development of a homoepitaxial technology for fabrication of X- and γ-ray detectors based on CdTe p-i-n diodes

Published:2007-04 Issue: Volume:166 Page:262-265
ISSN:0920-5632
Container-title:Nuclear Physics B - Proceedings Supplements
language:en
Short-container-title:Nuclear Physics B - Proceedings Supplements

Author:

Lovergine N.,Traversa M.,Paiano P.,Farella I.,Prete P.,Cola A.,Quaranta F.,Mancini A.M.

Publisher

Elsevier BV

Subject

Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Reference7 articles.

1. Recent advances in compound semiconductor radiation detectors

2. Influence of detector surface processing on detector performance

3. Development of high-resolution CdTe radiation detectors in a new M-/spl pi/-n design

4. MOVPE growth optimisation of CdTe epitaxial layers for p-i -n diode X-ray detector fabrication

5. N. Lovergine, M. Traversa, P. Paiano, P. Prete, L. Tapfer, and A.M. Mancini, to be reported elsewhere

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications;Sensors;2009-05-12

2. Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals;Applied Physics A;2008-01-25

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