Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
1. Deep-Ultraviolet Raman Microspectroscopy: Characterization of Wide-Gap Semiconductors
2. Phonon dispersion and Raman scattering in hexagonal GaN and AlN
3. Properties of strained wurtzite GaN and AlN:Ab initiostudies
4. Structure of epitaxial crystal interfaces
5. Defects associated with the accommodation of misfit between crystals
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes;Optical Materials Express;2017-12-21
2. Depth profiling of optical and vibrational properties in GaN/AlN quantum dot superlattices;physica status solidi (b);2009-06
3. Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations;Materials Science Forum;2008-09
4. Raman scattering analysis of GaN with various dislocation densities;physica status solidi (c);2008-05
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