Deep-Ultraviolet Raman Microspectroscopy: Characterization of Wide-Gap Semiconductors

Abstract

We have developed a high-throughput deep-ultraviolet (DUV) Raman microspectrometer with excitation from a continuous wave (cw) laser operated at 244 nm that enables us to characterize thin surface layers of wide-gap semiconductors. This spectrometer system consists of a filter spectrometer for the rejection of stray light and a high-dispersion spectrograph combined with a liquid nitrogen cooled charge-coupled device (CCD) detector and extends the low-frequency limit of the observable spectral range down to 170 cm−1. In the microscope we use a Cassegrain reflective objective for the collection of the scattered light and an off-axis mirror for introduction of the excitation laser light. DUV Raman spectroscopy has been applied for studying wide-gap semiconductors including SiC and AlGaN epitaxial films and shallow implanted layers of these materials. Raman spectra of various crystals have also been measured for examining the performance of this system. Resonance enhancement of Raman bands has been observed for several semiconductors, and the results are discussed.