Valence band anti‐crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain-Reference-Cited by-同舟云学术

Valence band anti‐crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain

Published:2004-02 Issue:3 Volume:1 Page:547-550
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Gomes P. F.¹,Godoy M. P. F.¹,Nakaema M. K. K.¹,Iikawa F.,Lamas T. E.²,Quivy A. A.²,Brum J. A.¹³

Affiliation:

1. Instituto de Física , Universidade Estadual de Campinas, C. P. 6165, 13083‐970 Campinas, SP, Brazil

2. Instituto de Física, Universidade Estadual de São Paulo, C.P. 66318, 05315‐970, São Paulo, SP, Brazil

3. Laboratório Nacional de Luz Síncrotron, C.P. 6192, 13084‐971, Campinas, SP, Brazil

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304036

Reference6 articles.

1. Strain-dependent optical emission inIn1−xGaxAs/InPquantum wells

2. Type II Band Alignment inSi1−xGex/Si(001)Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending

3. Landoldt‐Börnstein Numerical Data and Functional Relationships in Science and Technology edited by O. Madelung (Springer‐Verlag Berlin 1982) New Series Vol. III/17a pp. 218.

4. Direct-to-indirect energy-gap transition in strainedGaxIn1−xAs/InP quantum wells

5. Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices

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