Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures
Author:
Affiliation:
1. Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong, China
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303344
Reference7 articles.
1. K.Kasahara H.Miyamoto Y.Ando Y.Okamoto T.Nakayama andM.Kuzuhara IEEE Int. Electron Device Meeting Dig. 677 (2002).
2. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
3. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
4. Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor
5. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
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3. The interface trap analysis of AlGaN/GaN high electron mobility transistors with temperature based on conductance method;Journal of Physics: Conference Series;2022-04-01
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