Comparative investigation of the Si/SiO2 interface layer containing SiC crystallites using spectroscopic ellipsometry, ion beam analysis and XPS
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference26 articles.
1. Growth of Epitaxial β-SiC at the SiO[sub 2]/Si Interface as a Result of Annealing in CO
2. Optical models for the ellipsometric characterisation of porous silicon structures
3. Characterization of Thin Porous Silicon Films Formed on n[sup +]/p Silicon Junctions by Spectroscopic Ellipsometry
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