Influence of defects on the luminescence of Ge/Si quantum dots
Author:
Affiliation:
1. Department of Physics, University of Aveiro, 3810‐193 Aveiro, Portugal
2. Institute of Solid State and Semiconductor Physics, 220072 Minsk, Belarus
3. DaimlerChrysler Research Center, 89081 Ulm, Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303065
Reference9 articles.
1. Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
2. Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Structures
3. Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation
4. Growth studies of Ge-islands for enhanced performance of thin film solar cells
5. The optical properties of luminescence centres in silicon
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2. Hydrogen passivation of self-assembled Ge/Si quantum dots;Semiconductor Science and Technology;2014-06-01
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