Enhanced radiation hardness of InAs/InP quantum wires-Reference-Cited by-同舟云学术

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Enhanced radiation hardness of InAs/InP quantum wires

Published:2014-11-18 Issue:1 Volume:252 Page:134-138
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Sobolev Nikolai A.¹²,Santos Nuno M.¹,Leitão Joaquim P.¹,Carmo Maria C.¹,Fuster David³,González Luisa³,González Yolanda³,Wesch Werner⁴

Affiliation:

1. I3N and Departamento de Física; Universidade de Aveiro; 3810-193 Aveiro Portugal

2. National University of Science and Technology “MISiS”; 119049 Moscow Russia

3. IMM-Instituto de Microelectrónica de Madrid; CNM-CSIC; 28760 Tres Cantos Madrid Spain

4. Institut für Festkörperphysik; Friedrich-Schiller Universität; 07743 Jena Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201400163/fullpdf

Reference24 articles.

1. The space radiation environment for electronics

2. Radiation Effects in Quantum Dot Structures

3. Ion and electron irradiation-induced effects in nanostructured materials

4. Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing

5. Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires;Nanotechnology;2018-04-04

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