Junction properties of nitrogen-doped ZnO thin films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference14 articles.
1. Fabrication of wide-band-gap MgxZn1−xO quasi-ternary alloys by molecular-beam epitaxy
2. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO
3. Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO
4. p-ZnO/n-GaN heterostructure ZnO light-emitting diodes
5. P-type doping and devices based on ZnO
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