High temperature characterization of Pt-based Schottky diodes on AlGaN/GaN heterostructures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. Effect of thermal stability of GaN epi-layer on the Schottky diodes
2. Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
3. Effects of annealing on Ti, Pd, and Ni/n-Al/sub 0.11/Ga/sub 0.89/N Schottky diodes
4. Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N
5. Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal
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1. High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes;Applied Surface Science;2018-12
2. Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer;Journal of Electronic Materials;2018-11-15
3. Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study;Indian Journal of Physics;2015-06-20
4. Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures;Semiconductor Science and Technology;2014-07-23
5. Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies;Superlattices and Microstructures;2012-09
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