Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

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Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Published:2014-07-23 Issue:9 Volume:29 Page:095005
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ofuonye Benedict,Lee Jaseun,Yan Minjun,Sun Changwoo,Zuo Jian-Min,Adesida Ilesanmi

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=9/a=095005/pdf

Reference47 articles.

1. Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

2. Micromagnetic investigation of the dynamics of magnetization switching induced by a spin polarized current

3. Schottky barrier engineering in III–V nitrides via the piezoelectric effect

4. Schottky barrier properties of various metals on n-type GaN

5. Metal contacts to n-type GaN

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