Investigation of structural properties of high-rate deposited SiNxfilms prepared at low temperatures (100-300 °C) by atmospheric-pressure plasma CVD-Reference-Cited by-同舟云学术

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Investigation of structural properties of high-rate deposited SiNxfilms prepared at low temperatures (100-300 °C) by atmospheric-pressure plasma CVD

Published:2010-01-15 Issue: Volume: Page:NA-NA
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Yamaguchi Y.,Nakamura K.,Ohmi H.,Kakiuchi H.,Yasutake K.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes;Materials Science and Engineering: B;2024-09

2. Atmospheric-pressure low-temperature plasma processes for thin film deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-05

3. Center of Excellence for Atomically Controlled Fabrication Technology;Journal of Nanoscience and Nanotechnology;2011-04-01

4. Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma;Plasma Chemistry and Plasma Processing;2010-08-01

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