Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate-Reference-Cited by-同舟云学术

Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate

Published:2003-07-31 Issue:5 Volume: Page:1433-1436
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Alderighi D.¹,Zamfirescu M.¹,Gurioli M.¹,Vinattieri A.¹,Colocci M.¹,Sanguinetti S.²,Povolotskyi M.³,Di Carlo A.³,Lugli P.³,Nötzel R.⁴

Affiliation:

1. INFM, Dipartimento di Fisica and LENS, Via Sansone 1, 50019 Sesto Fiorentino, Firenze, Italy

2. Istituto Nazionale di Fisica della Materia and Dipartimento di Scienza dei Materiali, Universita' Milano Bicocca, Via Cozzi 53, 20125 Milano, Italy

3. INFM, Department of Electronic Engineering, University of Rome “Tor Vergata”, Roma, Italy

4. COBRA Inter‐University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303195

Reference11 articles.

1. Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires

2. Excitonic lasing in semiconductor quantum wires

3. Exciton capture and losses in a stacked submicron array of sidewall quantum wires on patternedGaAs(311)Asubstrates

4. Enhanced optical band-gap modulation in strained (InGa)As sidewall quantum wires on patterned GaAs (311)A substrates

5. Selectivity of growth on patterned GaAs (311)A substrates

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