Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference14 articles.
1. Optical characterization of surfaces during epitaxial growth using RDS and GIXS
2. In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy
3. Model for the strain‐induced reflectance‐difference spectra of InGaAs/GaAs (001) epitaxial layers
4. Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
5. Reflectance anisotropy of GaAs(100): Dislocation-induced piezo-optic effects
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3. Polarization contrast linear spectroscopies for cubic semiconductors under stress: macro- and micro-reflectance difference spectroscopies;Annalen der Physik;2010-11-24
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