Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices-Reference-Cited by-同舟云学术

Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices

Published:2006-06 Issue:6 Volume:3 Page:2237-2240
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kane M. H.,Strassburg M.,Fenwick W. E.,Asghar A.,Senawiratne J.,Azamat D.,Hu Z.,Malguth E.,Graham S.,Perera U.,Gehlhoff W.,Hoffmann A.,Dietz N.,Summers C. J.,Ferguson I. T.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference15 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in GaN, GaP, GaAs, and GaSb

3. Optical and magnetic measurements of p-type GaN epilayers implanted with Mn+ ions

4. Room temperature ferromagnetic properties of (Ga, Mn)N

5. Magnetic and optical properties of Ga1−xMnxN grown by metalorganic chemical vapour deposition

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4. Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD;Science China Technological Sciences;2011-05-14

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