Radiative and Nonradiative Recombination Times in Optically Excited GaInN/GaN Quantum Wells
Author:
Affiliation:
1. Institute of Technical Physics, Technical University of Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig, Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390054
Reference9 articles.
1. Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes
2. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
3. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
4. Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy
5. Internal electric fields in nitride-based heterostructures
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