Luminescent properties of wide bandgap materials at room temperature-Reference-Cited by-同舟云学术

Luminescent properties of wide bandgap materials at room temperature

Published:2004-01-19 Issue:2 Volume:1 Page:213-218
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Godlewski M.¹,Szmidt J.²,Olszyna A.³,Werbowy A.²,Łusakowska E.⁴,Phillips M.R.⁵,Goldys E.M.⁶,Sokołowska A.⁷

Affiliation:

1. College of Science, Dep. of Mathematics and Natural Sciences, Cardinal S. Wyszyński University, Warsaw, Poland

2. Institute of Microelectronics and Optoelectronics, Warsaw Technical Univ., Warsaw, Poland

3. Faculty of Mat. Sci. Eng., Warsaw Technical Univ., Warsaw, Poland

4. Institute of Physics, Polish Acad. of Sciences, Al. Lotników 32/46, 02‐668 Warsaw, Poland

5. Microstructural Analysis Unit, UTS, Sydney, Australia

6. Division of Information and Communication Sciences, Macquarie Univ., Sydney, Australia

7. Institute of Mat. Sci. Eng., Technical Univ. of Lodz, Lodz, Poland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303935

Reference26 articles.

1. T.L.Tansley E.M.Goldys M.Godlewski B.Zhou andH.Y.Zuo in Optoelectronic Properties of Semiconductors and Superlattices series editor M.O. Manasreh Vol. 2 GaN and Related Materials” ed. S.J. Pearton Gordon and Breach Publishers 1997 p. 233–293 and references therein.

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

4. Analysis of two‐step‐growth conditions for GaN on an AlN buffer layer

5. GaN Growth Using GaN Buffer Layer