Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference21 articles.
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1. Enhanced UV-visible photo responsivity of annealed Al/porous silicon (PS): p-Si Schottky device;Materials Letters;2021-08
2. Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode;Coatings;2019-10-21
3. Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20V;Materials Science in Semiconductor Processing;2015-04
4. Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes;Materials Science in Semiconductor Processing;2015-02
5. Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes;Journal of Materials Science: Materials in Electronics;2014-05-23
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