Nitride-Based LEDs With Modulation-Doped Al<tex>$_0.12hbox Ga_0.88 hbox N$</tex>–GaN Superlattice Structures-Reference-Cited by-同舟云学术

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Nitride-Based LEDs With Modulation-Doped Al<tex>$_0.12hbox Ga_0.88 hbox N$</tex>–GaN Superlattice Structures

Published:2004-10 Issue:10 Volume:51 Page:1743-1746
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Wen T.C.,Chang S.J.,Lee C.T.,Lai W.C.,Sheu J.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/29495/01337192.pdf?arnumber=1337192

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3. Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes;Materials;2020-01-17

4. Influence of Silicon-Doping in n-AlGaN Layer on the Optical and Electrical Performance of Deep Ultraviolet Light-Emitting Diodes;Russian Journal of Physical Chemistry A;2019-12

5. Effects of modulation doped n-AlGaN epilayers on the optoelectronic properties of 278-nm AlGaN-based flip-chip light-emitting devices;Journal of Materials Science: Materials in Electronics;2019-05-25

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