Peculiarities of dislocation photoluminescence in germanium with quasi-equilibrium dislocation structure-Reference-Cited by-同舟云学术

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Peculiarities of dislocation photoluminescence in germanium with quasi-equilibrium dislocation structure

Published:2007-07 Issue:8 Volume:4 Page:2898-2902
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Shevchenko S.,Tereshchenko A.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference14 articles.

1. , , and , in: Defect Control in Semiconductors, edited by K. Sumino (Elsevier Science Publishers B. V., North-Holland, 1990), p. 1447.

2. Photoluminescence and splitting of dislocations in germanium

3. On the mobility of partial dislocations in silicon

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1. Transport of Charge Carriers along Dislocations in Si and Ge;physica status solidi (a);2019-07-17

2. Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%;Journal of Electronic Materials;2015-12-29

3. Extended Defects in Semiconductors and Their Interactions with Point Defects and Impurities;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07

4. Luminescence from Germanium and Germanium on Silicon;Solid State Phenomena;2013-10

5. Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing;Applied Physics Letters;2013-07-15

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