High-field electron mobility in InGaAs quantum wells
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Nonlinear electron transport in asymmetric double quantum well structures;AIP Conference Proceedings;2018
2. Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier;Applied Physics A;2012-07-17
3. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures;Semiconductors;2011-09
4. Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields;Semiconductors;2011-06
5. Hot electron transport in heterostructures;Semiconductor Science and Technology;2010-12-09
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