Observation of individual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference15 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Origin of a fourfold symmetric (0 0 0 6) Bragg diffraction intensity inφ-scan mode on a 6H-SiC crystal;Journal of Physics D: Applied Physics;2015-10-02
2. Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+and 1 MeV Al+ions;X-Ray Spectrometry;2015-07-15
3. Characterization of epitaxial 4H-SiC for photon detectors;Journal of Instrumentation;2012-09-10
4. The stress birefringence images of low angle grain boundaries in 6H-SiC single crystals;Crystal Research and Technology;2012-05-25
5. Preferred Orientation of SiC Nanowires Induced by Substrates;The Journal of Physical Chemistry C;2010-01-22
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