Horizontal hot wall reactor design for epi-SiC growth-Reference-Cited by-同舟云学术

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Horizontal hot wall reactor design for epi-SiC growth

Published:2005-11 Issue:10-11 Volume:40 Page:972-975
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Veneroni A.,Omarini F.,Masi M.,Leone S.,Mauceri M.,Pistone G.,Abbondanza G.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference7 articles.

1. , , , , , , , , , , , , , , , , , , and , Mater. Sci. Forum (2004), in press.

2. , , , , , , and , in press J. Cryst. Growth (2004), in press.

3. , , , , , and , Mater. Sci. Forum (2004), in press.

4. A Model of Silicon Carbide Chemical Vapor Deposition

5. Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

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1. hot‐wall reactor;Catalysis from A to Z;2020-04-20

2. Application of ultra-high-temperature ceramics to oxidation-resistant and anti-ablation coatings for carbon-carbon composite;J KOR CRYST GROWTH C;2019

3. Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC;Materials Science Forum;2013-01

4. Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide;Crystal Growth & Design;2012-03-08

5. Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers;Journal of The Electrochemical Society;2010

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