Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide-Reference-Cited by-同舟云学术

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Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

Published:2012-03-08 Issue:4 Volume:12 Page:1977-1984
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Leone Stefano¹,Kordina Olof¹,Henry Anne¹,Nishizawa Shin-ichi¹²,Danielsson Örjan¹³,Janzén Erik¹

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, SE-58 183 Linköping, Sweden

2. National Institute of Advanced Industrial Science and Technology, 305-8568 Tsukuba, Japan

3. Sandvik Heating Technology AB, Box 502, SE-734 27 Hallstahammar, Sweden

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg201684e

Reference45 articles.

1. Development of 4H–SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity

2. Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

3. New Achievements on CVD Based Methods for SiC Epitaxial Growth

4. High growth rates (>30μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

5. Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

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1. High uniform N-type doping of 4H-SiC homoepitaxy based on a horizontal hot-wall reactor;Journal of Crystal Growth;2024-09

2. High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor;Coatings;2024-07-20

3. Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes;Energies;2024-07-03

4. The investigation of initial decomposition paths of methyltrichlorosilane on (0001) and (0001¯) surfaces of 4H-SiC: A DFT study;Surface Science;2024-06

5. A batch preparation of large-size graphite plate/SiC coating by CVD: CFD simulation and experimental;Ceramics International;2024-05

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