Review: GaN growth by ammonia based methods - density functional theory study
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference60 articles.
1. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
2. Preparation of large GaN substrates
3. Excellent crystallinity of truly bulk ammonothermal GaN
4. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Morphology of GaN Monolayers Grown on AlN Surface During Ammonia Flow Cycling;2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM);2022-06-30
2. GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow;Semiconductors;2022-06
3. Transformation of the elemental composition on the GaN surface during a 2D-3D transition;Applied Surface Science;2022-03
4. Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow;Applied Physics Letters;2022-01-31
5. Review—Review of Research on AlGaN MOCVD Growth;ECS Journal of Solid State Science and Technology;2020-01-22
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