Temperature-depending Raman line-shift of silicon carbide-Reference-Cited by-同舟云学术

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Temperature-depending Raman line-shift of silicon carbide

Published:2009-05-11 Issue:12 Volume:40 Page:1867-1874
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J. Raman Spectrosc.

Author:

Bauer Michael,Gigler Alexander M.,Huber Andreas J.,Hillenbrand Rainer,Stark Robert W.

Funder

Nanosystems Initiative Munich

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jrs.2334/fullpdf

Reference28 articles.

1. Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy

2. Temperature measurement in a silicon carbide light emitting diode by raman scattering

3. K. Dombrowski Micro-Raman investigation of mechanical stress in Si device structures and phonons in SiGe 2000

4. Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes3C,4H,6H,15R, and21R

5. Raman Scattering in6HSiC

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