Silicon-On-Insulator Devices
Author:
Affiliation:
1. Grenoble INP-Minatec; Grenoble France
Publisher
John Wiley & Sons, Inc.
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/047134608X.W3168.pub2/fullpdf
Reference84 articles.
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2. Formation of SiO2 films by oxygen-ion bombardment;Watanabe;Jpn. J. Appl. Phys.,1966
3. CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon;K. Izumi;Electron. Lett.,1978
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