Silicon Carbide Junction Field-Effect Transistors (SiC JFETs)-Reference-Cited by-同舟云学术

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Silicon Carbide Junction Field-Effect Transistors (SiC JFETs)

Published:2014-12-15 Issue: Volume: Page:1-37
ISSN:
Container-title:Wiley Encyclopedia of Electrical and Electronics Engineering
language:
Short-container-title:

Author:

Veliadis Victor¹

Affiliation:

1. Northrop Grumman Electronic Systems; Linthicum MD USA

Publisher

John Wiley & Sons, Inc.

Reference101 articles.

1. A. Agarwal S-H. Ryu J. Palmour In Semiconductor Materials and Devices Series Saddow 2004

2. Influence of basal plane dislocation induced stacking faults on the current gain in SiC BJTs,;Agarwal;Mater. Sci. Forum,2006

3. A case for high temperature, high voltage SiC bipolar devices,;Agarwal;Mater. Sci. Forum,2007

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC Technology;SiC Technology;2024

2. Overview of Silicon Carbide;SiC Technology;2024

3. SiC Power Device Mass Commercialization;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

4. SiC Mass Commercialization: Present Status and Barriers to Overcome;Materials Science Forum;2022-05-31

5. Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

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