Two-Step Epitaxy of Gallium Nitride on (0001) Sapphire
Author:
Publisher
John Wiley & Sons, Inc.
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781118788103.ch25/fullpdf
Reference12 articles.
1. Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and GaAlN Films Grown on Sapphire Substrate by MOVPE;Akasaki;J. Crystal Growth,1989
2. Comparative Study of GaN and AlN Nucleation Layers and Their Role in Growth of GaN on Sapphire by Metalorganic Chemical Vapor Deposition;Lorenz;Appl. Phys. Lett,2000
3. V. Narayanan “GaN Epitaxy on (0001) Sapphire,” accepted for publication in Phil. Mag. A (2001)
4. S. Mahajan “Large Lattice Mismatch Epitaxy,” MRS Sym. Proceedings, Volume #410 (Warrendale, PA: Materials Research Society, 1996), 3-15
5. Growth Defects in GaN Films on Sapphire: the Probable Origin of Threading Dislocations;Ning;J. Materials Research,1996
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