Ionic Glass–Gated 2D Material–Based Phototransistor: MoSe 2 over LaF 3 as Case Study-Reference-Cited by-同舟云学术

Ionic Glass–Gated 2D Material–Based Phototransistor: MoSe 2 over LaF 3 as Case Study

Published:2019-06-17 Issue:33 Volume:29 Page:1902723
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Noumbé Ulrich Nguétchuissi¹,Gréboval Charlie²,Livache Clément²,Brule Thibault³,Doudin Bernard¹,Ouerghi Abdelkarim⁴,Lhuillier Emmanuel²,Dayen Jean‐Francois¹^ORCID

Affiliation:

1. IPCMS‐CMRS UMR 7504Université de Strasbourg 23 Rue du Loess 67034 Strasbourg France

2. CNRSInstitut des NanoSciences de ParisINSPSorbonne Université F‐75005 Paris France

3. HORIBA ScientificHORIBA France S.A.SAvenue de la VauvePassage Jobin Yvon 91120 Palaiseau France

4. Centre de Nanosciences et de NanotechnologiesCNRSUniversité Paris‐SudUniversité Paris‐Saclay C2N–Marcoussis 91460 Marcoussis France

Funder

Agence Nationale de la Recherche

H2020 European Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201902723

Reference56 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. 2D transition metal dichalcogenides

3. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

4. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

5. Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

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