Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3Passivation Interface-Reference-Cited by-同舟云学术

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Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3Passivation Interface

Published:2018-02-21 Issue:17 Volume:28 Page:1705829
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Matsui Takayuki¹²^ORCID,Li Yi¹,Hsu Min-Hsiang Mark³⁴,Merckling Clement³,Oulton Rupert F.¹,Cohen Lesley F.¹,Maier Stefan A.¹⁵

Affiliation:

1. The Blackett Laboratory; Department of Physics; Imperial College London; London SW7 2AZ UK

2. Toyota Central R&D Labs., Inc.; 41-1, Yokomichi Nagakute Aichi 480-1192 Japan

3. IMEC; Kapeldreef 75 3001 Leuven Belgium

4. Photonics Research Group; INTEC; Ghent University - IMEC; Ghent 9000 Belgium

5. Nanoinstitut München; Fakultät für Physik; Ludwig-Maximilians-Universität München; 80799 München Germany

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Plasmon-induced hot carrier science and technology

2. Plasmonic hot electron transport drives nano-localized chemistry

3. Hot Electrons Do the Impossible: Plasmon-Induced Dissociation of H2 on Au

4. Plasmon-induced hot-electron generation at nanoparticle/metal-oxide interfaces for photovoltaic and photocatalytic devices

5. Photodetection with Active Optical Antennas

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2. Solution-Processed Ag-TiO₂ Nanostructure-Based Schottky Junction Thin Films for Narrowband Hot-Electron Photodetectors;ACS Applied Nano Materials;2023-08-14

3. Infrared Surface Plasmons Open a Hole Tunneling Channel in Metal–Oxide–Semiconductor Structures;ACS Photonics;2023-08-08

4. Ultrafast Plasmonic Hot Hole Transfer and Plasmon Dynamics in a Dual Plasmonic Au@p‐Cu₂₋_xSe Heterostructure;Advanced Optical Materials;2023-07-30

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